Guangdong Uchi Electronics Co.,Ltd
Guangdong Uchi Electronics Co.,Ltd Manufactuer of Varistor, Thermistor, Capacitor,Fuse & Resistor since 2006 !
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Low Power Loss Schottky Diodes High efficiency High current resistance
MBR30100.pdf
Schottky diode is a fast repair diode, which is a power consumption, fast semiconductor component. Its obvious characteristics are that the reverse recovery time is very short (can be as small as a few nanoseconds), and the forward pressure drop is only about 0.4V. Schottky diodes are mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and maintenance diodes. They are also effectively used as rectifier diodes and small data signal detection diodes in power circuits such as optical fiber communications. It is commonly used in secondary switching power supply rectification and high voltage power supply rectification of color TV. The Schottky diode uses the metal-semiconductor junction as the Schottky barrier to achieve the actual effect of rectification, which is different from the P-N junction formed by the semiconductor-semiconductor junction in general diodes. The characteristics of the Schottky barrier make the on-off current of the Schottky diode lower, and can increase the conversion rate. Schottky diodes have an extremely low on-off operating voltage. A general diode will generate a current of about 0.7-1.7 amperes when the current passes through it, but the current of the Schottky diode is only 0.15-0.45 amperes, which can improve the efficiency of the system.
Features
1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
Applications
1. High frequency switch Power supply
2. Free wheeling diodes, Polarity protection applications
MAIN CHARACTERISTICS
| IF(AV) | 10(2×5)A |
| VF(max) | 0.7V (@Tj=125°C) |
| Tj | 175 °C |
| VRRM | 100 V |
PRODUCT MESSAGE
| Model | Marking | Package |
| MBR10100 | MBR10100 | TO-220C |
| MBRF10100 | MBRF10100 | TO-220F |
| MBR10100S | MBR10100S | TO-263 |
| MBR10100R | MBR10100R | TO-252 |
| MBR10100V | MBR10100V | TO-251 |
| MBR10100C | MBR10100C | TO-220 |
ABSOLUTE RATINGS (Tc=25°C)
| Parameter |
Symbol |
Value |
Unit | ||
| Repetitive peak reverse voltage | VRRM | 100 | V | ||
| Maximum DC blocking voltage | VDC | 100 | V | ||
| Average forward current | TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) |
per device
per diode | IF(AV) | 10 5 | A |
|
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) | IFSM | 120 | A | ||
| Maximum junction temperature | Tj | 175 | °C | ||
| Storage temperature range | TSTG | -40~+150 | °C | ||